G&P POLI-500

The G&P Technology POLI-500 is used for the planarization of dielectric, conducting, and semiconductor thin films on silicon wafers and other substrate materials. This polishing tool is an excellent choice for processing 6” (150mm) and 8” (200mm) wafers. This tool is available in several different configurations depending upon the customer’s need for the carrier type, pad conditioning technology, pad profiling capability, and process measurement and monitoring control systems. In the tradition of all G & P Technology tools and equipment, the POLI-500 is a versatile and flexible process tool already chosen by R&D laboratories, university research centers, consumables suppliers, substrate manufacturers, and chip developers.

STANDARD FEATURES INCLUDE:

  • Polishing pressure
  • Rotational speed of the polishing platen & wafer carrier
  • Carrier membrane pressure
  • Downforce of the pad conditioning disk
  • Sweep speed of the conditioning arm
  • Oscillation of the wafer carrier on the polishing pad
  • Polishing process time
  • Slurry wetting time on pad
  • Flow rate of the polishing slurry
  • Buffing/rinsing time
  • Flow rate of D.I. water during buffing/rinsing cycle

CONDITIONING ARM OPTIONS:

Swing Arm Conditioning (radial sweep – optional)

  • 100mm end effector (standard), 0-200 rpm range
  • Downforce range, .45 – 9.1kgf (1 – 20 lbf)
  • Sweep zone control, 12 segments
  • Sweep rate, 0 – 20 sweep / minute
  • Conditioning disk clean station

Oscillating Arm Conditioning (linear sweep – standard)

  • 240mm end effector, segmented or pellet
  • Downforce range, 3 – 10 kgf (6 – 22 lbf)
  • Sweep rate, 0 – 12 sweep / minute

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Axus partners with Plessey Semiconductors to help bring high-performance GaN-on-Silicon monolithic microLED technology to the mass market.

Using tooling from Axus and optimised processes, Plessey Semiconductors has achieved a successful wafer to wafer bond of a 1080p microLED display 0.26” diagonal to a 3-micron pixel-pitch backplane. Much smaller than the 0.7" diagonal 8-micron pixel-pitch active-matrix display previously demonstrated.

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